NCEP4040Q: An N-Channel Super Trench Power MOSFET Manufactured by NCEPOWER

Core Parameters

• Voltage & Current RatingsDrain-source voltage (VDS​): 40VContinuous drain current (ID​): 40APulsed drain current (IDM​): 125A

• On-Resistance (RDS(ON)​)At VGS​=10V: Typical value 7.7mΩ, Maximum value 8.8mΩAt VGS​=4.5V: Typical value 11mΩ, Maximum value 13mΩ

• Capacitance CharacteristicsInput capacitance (CISS​): 831pFOutput capacitance (COSS​): 318pFReverse transfer capacitance (CRSS​): 24pF

• Switching CharacteristicsTurn-on delay time (td(on)​): 6nsRise time (tr​): 2.8nsTurn-off delay time (td(off)​): 23nsFall time (tf​): 3nsTotal gate charge (Qg​): 17.6nC

Technical Features

It adopts super trench technology, which optimizes high-frequency switching performance and minimizes conduction and switching power losses. The device boasts an excellent Figure of Merit (FOM) that combines gate charge and on-resistance. It operates within a temperature range of -55°C to 150°C, features lead-free plating, and has passed 100% Unclamped Inductive Switching (UIS) tests and 100% ΔVDS​ tests.

Package Type

It is housed in a DFN3.3×3.3-8L package.

Application Fields

It is suitable for DC/DC converters, and particularly ideal for high-frequency switching and synchronous rectification applications.