Infineon's MOSFET products focus on high performance, high reliability and ease of use, delivering outstanding energy efficiency and high power density.

[Shanghai, China, January 8, 2026] As a global leader in semiconductor solutions for power systems and the Internet of Things (IoT), Infineon Technologies AG is driving innovation in server power management with its silicon-based power MOSFET technology, CoolMOS™, enabling the development of high-performance power supply solutions that meet the stringent requirements of data centers. Infineon’s 600V CoolMOS™ 8 Super Junction (SJ) MOSFET product series has helped Great Wall Power Supply Technology Co., Ltd. achieve higher power density and superior cost-effectiveness in power supplies of higher power ratings.

Infineon's MOSFET products focus on high performance, high reliability and ease of use, delivering outstanding energy efficiency and high power density. The 600V CoolMOS™ 8 Super Junction (SJ) MOSFET is engineered to deliver excellent efficiency, reliability and cost savings. Key reasons for Great Wall Power Supply’s adoption of this technology include seamless scalability between 600V CoolMOS™ 7 and CoolMOS™ 8 for supply flexibility, as well as ease of implementation in the LLC stage.

Christina Guggenberger, Vice President of High-Voltage Power Switch Product Line at Infineon Technologies, commented: “With our silicon-based power MOSFET technology, Infineon delivers exceptional performance, reliability and cost-effectiveness to customers, setting an industry benchmark for innovation and excellence worldwide. Our CoolMOS™ 8 technology is a perfect example of this commitment, providing robust support for building high-performance power supply solutions that meet the rigorous demands of data center applications.”

Dr. Jin, Chief Technology Officer of Great Wall Power Supply, stated: “The deepening of our long-term cooperation with Infineon has enabled us to leverage its industry-leading CoolMOS™ 8 Super Junction (SJ) MOSFET technology to enhance our system performance and achieve greater cost-effectiveness. This collaboration underscores our unwavering commitment to pursuing innovation and excellence in the industry. We are pleased to see that the power supply units (PSUs) we now offer to customers have achieved significant improvements in power density and cost savings.”

Infineon’s newly launched 600V CoolMOS™ 8 leads the global market in high-voltage super junction MOSFET technology, setting a benchmark for technical standards and cost-performance ratio worldwide. This technology elevates overall system performance and further accelerates the decarbonization process across applications including chargers, adapters, photovoltaic and energy storage systems, electric vehicle charging equipment, and uninterruptible power supplies (UPS). Compared with the CFD7 series, the 600V CoolMOS™ 8 Super Junction (SJ) MOSFET reduces gate charge by 18%; versus the P7 series, gate charge is cut by 33%. Lower gate charge means less electrical charge is required to switch the MOSFET from the off-state (non-conducting) to the on-state, thereby enabling more energy-efficient system performance. In addition, this MOSFET features one of the fastest turn-off times on the market, with thermal performance improved by 14% to 42% compared to the previous generation. Available in package types such as SMD-QDPAK, TOLL and ThinTOLL-8x8, the 600V CoolMOS™ 8 Super Junction (SJ) MOSFET incorporates an integrated fast body diode, making it suitable for a wide range of consumer and industrial applications.

In addition to silicon carbide (SiC) and gallium nitride (GaN) technologies, Infineon’s power MOSFETs set an industry benchmark in terms of performance, reliability, quality and cost-effectiveness. They not only deliver best-in-class application results, but also empower customers to develop innovative and cost-efficient solutions to meet diverse stringent requirements.